Propiedades morfológicas y estructurales de recubrimientos nitruro de titanio aluminio producidos por magnetron sputtering tríodo

Autores/as

  • D M Devia Universidad Tecnológica de Pereira
  • E Restrepo-Parra Universidad Nacional de Colombia
  • J M Vélez-Restrepo Universidad Nacional de Colombia

DOI:

https://doi.org/10.17230/ingciencia.10.20.4

Palabras clave:

TiAlN, voltaje de polarización, sputtering, procentaje atómico, XRD.

Resumen

Se crecieron recubrimientos de TixAl1-xN empleando la técnica de magnetron sputtering tríodo, variando el voltaje de polarización entre -40 V y -150V. Por medio de espectroscopía de energía dispersiva, difracción de rayos x y miscroscopía de fuerza atómica, se analizó la influencia del voltaje de polarización sobre las propiedades morfológicas y estructurales de los recubrimientos. A medida que el voltaje bias se incrementó, se observó un aumento en el porcentaje atómico de Al, compitiendo con la concentración de Ti y produciendo cambios estructurales. A bajas concentraciones de Al, la pelcula exhibió una estructura cristalina FCC; sin embargo, a medida que le porcentaje de Al disminuyó, se pudo detectar una mezcla de fases FCC y HCP. Por otro lado, el incremento en el voltaje de polarización produjo una disminución en el espesor de las películas, debido al aumento en el número de colisiones. Además, el tamaño de grano y la rugosidad se vieron fuertemente afectados por el voltaje bías.

PACS:61.05.cp

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Biografía del autor/a

  • D M Devia, Universidad Tecnológica de Pereira
    Doctora en Ingeniería
  • E Restrepo-Parra, Universidad Nacional de Colombia
    Doctora en Ingeniería,
  • J M Vélez-Restrepo, Universidad Nacional de Colombia

    Doctor en Ingenieria de Metalurgia

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Publicado

2014-04-28

Número

Sección

Artículos

Cómo citar

Devia, D. M., Restrepo-Parra, E., & Vélez-Restrepo, J. M. (2014). Propiedades morfológicas y estructurales de recubrimientos nitruro de titanio aluminio producidos por magnetron sputtering tríodo. Ingeniería y Ciencia, 10(20), 51-64. https://doi.org/10.17230/ingciencia.10.20.4

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