Influencia de la inserción de átomos de Si en la formación del compuesto TiSiN por simulación DFT

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Juan Manuel Gonzalez
Johans Steeven Restrepo https://orcid.org/0000-0001-6788-040X
Carolina Ortega Portilla
Alexander Ruden Muñoz https://orcid.org/0000-0002-1221-5303
Federico Sequeda Osorio

Keywords

Teoría de funcionales de densidad, estructura cristalina, silicio, películas delgadas, revestimientos

Resumen

Se simularon estructuras del SiN y TiN utilizando Teoría de Funcionales de Densidad (DFT), con el fin de estudiar la influencia de la inserción de átomos de Si en la estructura del TiN en posiciones intersticiales y sustitucionales de una red cristalina cúbica centrada en las caras (FCC). Los resultados mostraron que la estructura SiN-FCC es pseudo estable, mientras que la estructura tetragonal es estable, con comportamiento cerámico. La estructura del TiN-FCC es estable con un comportamiento cerámico similar al del SiN-tetragonal. La inserción de 21% de átomos de Si en posiciones intersticiales, el material mostró alta deformación inducida, alta polarización y formación de enlaces Si-N, indicadores de una transición amorfa que podría producir un compuesto formado por granos o nanogranos de TiN embebidos en una matriz amorfa de Si-N. Mientras que al incluir 21% de Si sustituyendo átomos de Titanio, se observó una distribución más estable, que puede producir diferentes fases del compuesto estequiométrico Ti1-xSixNy.

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